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HAT2204C
Silicon N Channel MOS FET Power Switching
REJ03G0448-0500 Rev.5.00 May 10, 2007
Features
* Low on-resistance RDS(on) = 26m typ.(at VGS = 4.5 V) * Low drive current * High density mounting * 1.8 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3
2345 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1
1
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Pch Note2 Tch Tstg
Note1
Ratings 12 8 3.5 14 3.5 900 150 -55 to +150
Unit V V A A A mW C C
Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 1 of 7
HAT2204C
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body - Drain diode forward voltage Notes: 3. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 12 8 -- -- 0.3 -- -- -- 8.5 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 26 34 45 13 770 115 50 10 9.5 36 5 9 1.5 2 0.8 Max -- 10 1 1.2 34 44 69 -- -- -- -- -- -- -- -- -- -- -- 1.1 Unit V A A V m m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = 10 A, VDS = 0 VGS = 6.4 V, VDS = 0 VDS = 12 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.8 A, VGS = 4.5 VNote3 ID = 1.8 A, VGS = 2.5 VNote3 ID = 1.8 A, VGS = 1.8 VNote3 ID = 1.8 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz ID = 1.8 A, VGS = 4.5 V VDS = 10 V, RL = 5.6 , Rg = 4.7 VDD = 10 V VGS = 4.5 V ID = 3.5 A IF = 3.5 A, VGS = 0 Note3
REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 2 of 7
HAT2204C
Main Characteristics
Power vs.Temperature Dreating 1.6 100
Test condition When using the glass epoxy board.(FR4 40 x 40 x 1.6 mm)
Maximum Safe Operation Area
Ta = 25C,1 shot pulse
Pch (W)
30
100 s
When using the FR4 board.
ID (A)
10 s
PW
C D
1.2
10
1
= 10
Power Dissipation
Drain Current
3 1 0.3 0.1 0.03
m s
s
0.8
m
0.4
Operation in this area is limited by
pe O t ra n io
RDS(on)
0
50
100
150 Ta (C)
200
0.01 0.03 0.1 0.3
1
3
10 30 100 VDS (V)
Ambient Temperature
Drain to Source Voltage
20
Typical Output Characteristics Pulse Test 4.5 V 2.5 V
1.8 V
Typical Transfer Characteristics 20 25C
ID (A)
ID (A)
16
16 -25C 12 Tc = 75 C
12 1.6 V 8
1.4 V
Drain Vurrent
Drain Current
8
4
VGS = 1.2 V
4 VDS = 10 V Pulse Test 0 1 2 3 Gate to Source Voltage 4 5 VGS (V)
0
2 4 6 Drain to Source Voltage
8 10 VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage 160
1000
Drain to Source On State Resistance vs. Drain Current Pulse Test
Drain to Source Saturation Voltage VDS(on) (mV)
Pulse Test
120 ID = 3.5 A 80 1.8 A 40 1A 10 0.1 100 VGS = 1.8 V 2.5 V 4.5 V
0
2
4
6
8 VGS (V)
10
1 Drain Current
10 ID (A)
100
Gate to Source Voltage
REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 3 of 7
HAT2204C
Static Drain to Source On State Resistance vs. Temperature 100 Forward Transfer Admittance vs. Drain Current Tc = -25C 25C 10 75C 3 1 0.3 0.1 0.1
VDS = 10 V Pulse Test
Forward Transfer Admittance |yfs| (S)
100 30
80 ID = 3.5 A 60 VGS = 1.8 V 1A 40 2.5 V 1, 1.8 A 20 0 -25 4.5 V 1, 1.8, 3.5 A Pulse Test 0 25 50 75 100 125 150 Tc (C) Case Temperature 3.5 A 1.8 A
0.3
1
3
10
30
100
Drain Current
ID (A)
Dynamic Input Characteristics 40
VDS (V)
Typical Capacitance vs. Drain to Source Voltage 8
VGS (V)
10000 3000
ID = 3.5 A 30 VDD = 12 V 10 V 5V 20 VDD = 12 V 10 V 5V VDD 0 4 8 12 16 Gate Charge Qg (nC) Reverse Drain Current vs. Source to Drain Voltage 0 20 6
VGS = 0 f = 1 MHz Ciss
VGS
Drain to Source Voltage
Gate to Source Voltage
Capacitance C (pF)
1000 300 100 30 10 3 1
Coss
4
Crss
10
2
0
2
4
6
8
10 VDS (V)
12
Drain to Source Voltage
20
IDR (A)
1000
Switching Characteristics
Switching Time t (ns)
16 12
5V tr 100 td(off)
Reverse Drain Current
VGS = 0 , -5 V
8
10
td(on) tf
4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V)
1 0.1
0.3
1
3
10
30
100
Drain Current
ID (A)
REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 4 of 7
HAT2204C
Switching Time Test Circuit Vin Monitor D.U.T. RL 4.7 Vin 4.5 V VDS = 10 V Vin Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform
90%
REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 5 of 7
HAT2204C
Package Dimensions
Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g
D e A c LP
E
HE
A xM
A S A b
L
e A2 A
Reference Symbol
Dimension in Millimeters
yS
A1 S e1 b l1
c
b2 Pattern of terminal position areas
A-A Section
A A1 A2 b c D E e HE L LP x y b2 e1 l1
Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15
Nom
0.2 0.15 2.0 1.7 0.65 2.1 0.2
Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5
1.65
Ordering Information
Part Name HAT2204C-EL-E Note: Quantity 3000 pcs Taping Shipping Container
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 6 of 7
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(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
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